Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
20 V
1A
340 mV @ 1 A
12.4 ns
600 µA @ 20 V
-