Total: 6
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Small signal=< 200mA(Io),arbitrarily speed
standard
Schottky barrier
80 V
40 V
30 V
70 V
70mA(DC)
100mA
350mA(DC)
1.2 V @ 100 mA
960 mV @ 15 mA
450 mV @ 10 mA
810 mV @ 350 mA
1.6 ns
500 nA @ 80 V
10 µA @ 70 V
400 nA @ 30 V
12 µA @ 30 V
1pF @ 0V,1MHz
0.3pF @ 0V,1MHz
2.7pF @ 5V,1MHz
6pF @ 25V,1MHz
0.5pF @ 0V,1MHz