Total: 18
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Nexperia
Base installation
bulk
POWER MOS 7®
On sale
-40°C ~ 150°C(TJ)
SP6
SP4
2 N-channels(two)
2 N channels(half-bridge)
2 N Channel(two)Asymmetric type
4 N channels(H )
1200V(1.2kV)
200V
500V
1000V(1kV)
90A
175A
208A
99A
36A
43A
34A
210 mΩ @ 21.5A,10V
10 mΩ @ 104A,10V
45 mΩ @ 45A,10V
12 mΩ @ 87.5A,10V
39 mΩ @ 49.5A,10V
270 mΩ @ 18A,10V
348 mΩ @ 17A,10V
5V @ 5mA
246nC @ 10V
224nC @ 10V
280nC @ 10V
308nC @ 10V
372nC @ 10V
374nC @ 10V
14400pF @ 25V
11200pF @ 25V
14000pF @ 25V
13700pF @ 25V
8700pF @ 25V
10400pF @ 25V
10300pF @ 25V
standard
SiC