stop production-55°C ~ 175°C(TJ)3V @ 250µALogic level gate-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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FET, MOSFET

Total: 7

NVMFD5875NLWFT1G

Brand：ON

Stock：20196

Store: ShenZhen/Hongkong

Description：MOSFET 2N-CH 60V 7A SO8FL

NVMFD5875NLWFT3G

Brand：ON

Stock：25143

Store: ShenZhen/Hongkong

Description：MOSFET 2N-CH 60V 7A SO8FL

NVMFD5875NLT3G

Brand：ON

Stock：25292

Store: ShenZhen/Hongkong

Description：MOSFET 2N-CH 60V 7A SO8FL

FDS4953

Brand：ON

Stock：8992

Store: ShenZhen/Hongkong

Description：MOSFET 2P-CH 30V 5A 8SOIC

FDS4935

Brand：ON

Stock：29763

Store: ShenZhen/Hongkong

Description：MOSFET 2P-CH 30V 7A 8SOIC

NVMFD5875NLT1G

Brand：ON

Stock：3377

Store: ShenZhen/Hongkong

Description：MOSFET 2N-CH 60V 7A SO8FL

Price：1+

￥1.32

FDS4559

Brand：ON

Stock：31269

Store: ShenZhen/Hongkong

Description：MOSFET N/P-CH 60V 4.5/3.5A 8SOIC

Price：1+

￥1.07

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR,CT

TR,CT,bulk

series

Automotive, AEC-Q101

PowerTrench®

Part status

stop production

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

8-PowerTDFN

FET Type

N and P Channel

2 P Channel(two)

2 N-channels(two)

Drain source voltage (Vdss)

30V

60V

Current at 25 ° C - continuous drain (Id)

4.5A,3.5A

On resistance (maximum) for different Ids and Vgs

23 mΩ @ 7A,10V

55 mΩ @ 5A,10V

55 mΩ @ 4.5A,10V

33 mΩ @ 7.5A,10V

Vgs (th) (maximum) for different Ids

3V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

18nC @ 10V

20nC @ 10V

21nC @ 5V

9nC @ 5V

Input capacitance at different Vds (Ciss) (maximum)

650pF @ 25V

540pF @ 25V

1233pF @ 15V

528pF @ 15V

FET function

Logic level gate

Reset