Total: 1
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Nexperia
Surface mount
TR
SIPMOS®
stop production
-55°C ~ 150°C(TJ)
8-SOIC(0.154,3.90mm wide)
N and P Channel
20V
3.7A
100 mΩ @ 3.7A,10V
2V @ 10µA
11.5nC @ 10V
246pF @ 25V
Logic level gate