9.1nC @ 4.5V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR

TR,CT

series

Automotive, AEC-Q101

Part status

On sale

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

SOT-23-6 ,TSOT-23-6

6-UDFN Exposed Pad

FET Type

2 P Channel(two)

2 N-channels(two)

Drain source voltage (Vdss)

-

20V

Current at 25 ° C - continuous drain (Id)

4.5A(Ta)

5.8A(Ta)

On resistance (maximum) for different Ids and Vgs

50 mΩ @ 2A,4.5V

28 mΩ @ 8.2A,4.5V

Vgs (th) (maximum) for different Ids

1V @ 250µA

900mV @ 250µA

Gate charge (Qg) at different Vgs (maximum)

9.1nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

752pF @ 15V

689pF @ 10V

FET function

standard