13.2nC @ 10V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR

TR,CT

series

OptiMOS™

Part status

On sale

working temperature

-55°C ~ 150°C(TJ)

-55°C ~ 155°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

8-VDFN Exposed Pad

8-PowerVDFN

FET Type

N and P Channel

2 N-channels(two)

2 N Channel(two)Asymmetric type

Drain source voltage (Vdss)

30V

Current at 25 ° C - continuous drain (Id)

8A

5.5A,5.8A

6.7A

8A,10.7A

On resistance (maximum) for different Ids and Vgs

15 mΩ @ 20A,10V

20 mΩ @ 6A,10V

27 mΩ @ 6A,10V

22 mΩ @ 10A,10V

Vgs (th) (maximum) for different Ids

2.2V @ 250µA

3V @ 250µA

2.1V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

13.2nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

641pF @ 15V

697pF @ 15V

1100pF @ 15V

FET function

standard

Logic level gate