TR24nC @ 4.5V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR

series

PowerTrench®

Part status

On sale

stop production

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

6-SMD,no feedthrough

12-PowerWQFN

FET Type

2 N-channels(two)

2 N Channel(two)Co leakage

Drain source voltage (Vdss)

20V

12V

25V

Current at 25 ° C - continuous drain (Id)

17A(Ta)

8A

74A

On resistance (maximum) for different Ids and Vgs

17 mΩ @ 8A,4.5V

5.9mOhm @ 5A,4.5V

3.01 mΩ @ 18A,10V

Vgs (th) (maximum) for different Ids

3V @ 250µA

1.5V @ 250µA

1.3V @ 1mA

Gate charge (Qg) at different Vgs (maximum)

24nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

-

1676pF @ 10V

3340pF @ 13V

FET function

standard

Logic level gate