7.8nC @ 10V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR,CT

series

DeepGATE™, STripFET™ VII

Part status

On sale

stop production

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

8-PowerVDFN

FET Type

2 P Channel(two)

2 N-channels(two)

Drain source voltage (Vdss)

30V

100V

Current at 25 ° C - continuous drain (Id)

20A

4.4A

On resistance (maximum) for different Ids and Vgs

65 mΩ @ 5A,10V

67 mΩ @ 2.5A,10V

Vgs (th) (maximum) for different Ids

4.5V @ 250µA

2.1V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

7.8nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

336pF @ 25V

408pF @ 50V

FET function

standard

Logic level gate