Total: 1
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Nexperia
Surface mount
TR
HEXFET®
stop production
-55°C ~ 150°C(TJ)
8-SOIC(0.154,3.90mm wide)
2 P Channel(two)
12V
9.2A
17 mΩ @ 9.2A,4.5V
900mV @ 250µA
57nC @ 4.5V
3450pF @ 10V
Logic level gate