Total: 3
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Nexperia
Surface mount
TR,CT
CT
TR,CT,bulk
HEXFET®
On sale
stop production
150°C(TJ)
-55°C ~ 150°C(TJ)
8-SOIC(0.154,3.90mm wide)
6-VQFN Exposed Pad
6-PowerVDFN
2 P Channel(two)
2 N-channels(two)
30V
450V
2.3A
700mA
170 mΩ @ 3.1A,10V
12.1 Ω @ 350mA,10V
4.5V @ 1mA
2.4V @ 10µA
3.7nC @ 10V
160pF @ 25V
55pF @ 20V
Logic level gate