21nC @ 5V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR

TR,CT

series

PowerTrench®

Part status

On sale

stop production

working temperature

-55°C ~ 150°C(TJ)

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

8-TSSOP(0.173,4.40mm wide)

FET Type

2 P Channel(two)

Drain source voltage (Vdss)

30V

20V

Current at 25 ° C - continuous drain (Id)

7A

4.4A

On resistance (maximum) for different Ids and Vgs

23 mΩ @ 7A,10V

35 mΩ @ 4.4A,4.5V

Vgs (th) (maximum) for different Ids

3V @ 250µA

1.5V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

21nC @ 5V

Input capacitance at different Vds (Ciss) (maximum)

1233pF @ 15V

1465pF @ 10V

FET function

Logic level gate