stop production8-SOIC(0.154,3.90mm wide)28 mΩ @ 6.3A,10V,13.5 mΩ @ 8.6A,10V9nC @ 5V,16nC @ 5V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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Category

FET, MOSFET

Total: 1

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

series

PowerTrench®, SyncFET™

Part status

stop production

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

FET Type

2 N-channels(two)

Drain source voltage (Vdss)

30V

Current at 25 ° C - continuous drain (Id)

6.3A,8.6A

On resistance (maximum) for different Ids and Vgs

28 mΩ @ 6.3A,10V,13.5 mΩ @ 8.6A,10V

Vgs (th) (maximum) for different Ids

3V @ 250µA,3V @ 1mA

Gate charge (Qg) at different Vgs (maximum)

9nC @ 5V,16nC @ 5V

Input capacitance at different Vds (Ciss) (maximum)

610pF @ 10V,1250pF @ 10V

FET function

standard

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