Automotive, AEC-Q1011.5V @ 250µA17 mΩ @ 11.8A,4.5V,32 mΩ @ 8.9A,4.5V1787pF @ 6V,2100pF @ 6V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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FET, MOSFET

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Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR,CT

series

Automotive, AEC-Q101

Part status

stop production

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-PowerTDFN

FET Type

N and P Channel Complementary type

Drain source voltage (Vdss)

12V

Current at 25 ° C - continuous drain (Id)

13A(Ta),9.4A(Ta)

On resistance (maximum) for different Ids and Vgs

17 mΩ @ 11.8A,4.5V,32 mΩ @ 8.9A,4.5V

Vgs (th) (maximum) for different Ids

1.5V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

18.6nC @ 4.5V,23.7nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

1787pF @ 6V,2100pF @ 6V

FET function

standard

Reset