TRSurface mount-55°C ~ 150°C(TJ)30V1464pF @ 25V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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FET, MOSFET

Total: 1

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

series

HEXFET®

Part status

stop production

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-TSSOP(0.173,4.40mm wide)

FET Type

2 P Channel(two)

Drain source voltage (Vdss)

30V

Current at 25 ° C - continuous drain (Id)

4.5A

On resistance (maximum) for different Ids and Vgs

35 mΩ @ 4.5A,10V

Vgs (th) (maximum) for different Ids

2.5V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

44nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

1464pF @ 25V

FET function

Logic level gate

Reset