630pF @ 24V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

bulk

TR

TR,CT

TR,CT,bulk

series

Part status

stop production

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

FET Type

N and P Channel

2 N-channels(two)

N and P Channel Complementary type

Drain source voltage (Vdss)

30V

Current at 25 ° C - continuous drain (Id)

4.1A,3A

4.1A

On resistance (maximum) for different Ids and Vgs

70 mΩ @ 3A,10V

Vgs (th) (maximum) for different Ids

3V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

16nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

630pF @ 24V

FET function

Logic level gate