standard9.2A(Ta),33.2A(Tc)-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR

series

Automotive, AEC-Q101

Part status

On sale

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-PowerTDFN

FET Type

2 N-channels(two)

Drain source voltage (Vdss)

60V

Current at 25 ° C - continuous drain (Id)

9.2A(Ta),33.2A(Tc)

On resistance (maximum) for different Ids and Vgs

19 mΩ @ 10A,10V

Vgs (th) (maximum) for different Ids

2.5V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

17nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

864pF @ 30V

FET function

standard