Total: 36
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Nexperia
Surface mount
TR
TR,CT
pipe
TR,CT,bulk
TR,bulk
Automotive, AEC-Q101
OptiMOS™
PowerTrench®
HEXFET®
stop production
-55°C ~ 175°C(TJ)
8-SOIC(0.154,3.90mm wide)
8-PowerTDFN
8-PowerVDFN
DirectFET™ isovolume MA
N and P Channel
2 P Channel(two)
2 N-channels(two)
30V
20V
60V
40V
100V
55V
80V
15A
20A
6.9A
5.1A
5A
10A
7A
5.3A
3A
4.5A
3.4A
8A,11A
12A
1.3A
4.5A,3.5A
6.4A
40 mΩ @ 4A,10V
23 mΩ @ 7A,10V
55 mΩ @ 5A,10V
55 mΩ @ 4.5A,10V
10 mΩ @ 15A,10V
36 mΩ @ 15A,10V
13 mΩ @ 15A,10V
6.9 mΩ @ 20A,10V
50 mΩ @ 5.1A,10V
65 mΩ @ 15A,10V
29 mΩ @ 6.9A,10V
15.5 mΩ @ 8A,10V
45 mΩ @ 10A,10V
23 mΩ @ 16A,10V
35 mΩ @ 11A,10V
6.6 mΩ @ 15A,10V
50 mΩ @ 2.7A,10V
33 mΩ @ 7.5A,10V
44 mΩ @ 15A,10V
125 mΩ @ 3A,10V
480 mΩ @ 1.3A,10V
74 mΩ @ 3.4A,10V
55 mΩ @ 3.2A,4.5V
1.2V @ 250µA
2.5V @ 250µA
4V @ 250µA
3V @ 250µA
2.4V @ 250µA
2.2V @ 20µA
2.35V @ 25µA
2.2V @ 10µA
2.2V @ 15µA
3V @ 100µA
18nC @ 10V
24nC @ 10V
44nC @ 10V
14nC @ 4.5V
33nC @ 10V
20nC @ 4.5V
36nC @ 10V
12.4nC @ 10V
42nC @ 10V
23nC @ 10V
20nC @ 10V
5nC @ 10V
22.5nC @ 10V
8.6nC @ 4.5V
21nC @ 10V
21nC @ 5V
23.4nC @ 10V
30.5nC @ 10V
9nC @ 5V
1800pF @ 25V
755pF @ 25V
650pF @ 25V
780pF @ 25V
560pF @ 25V
766pF @ 15V
1420pF @ 25V
2950pF @ 25V
1730pF @ 25V
1380pF @ 15V
515pF @ 25V
540pF @ 25V
330pF @ 25V
1225pF @ 25V
1233pF @ 15V
153pF @ 50V
668pF @ 25V
1100pF @ 25V
1560pF @ 25V
634pF @ 40V
632pF @ 50V
825pF @ 10V
528pF @ 15V
670pF @ 25V
Logic level gate