Automotive, AEC-Q101150°C(TJ)Logic level gate-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR

TR,CT

series

Automotive, AEC-Q101

Part status

On sale

working temperature

150°C(TJ)

Encapsulation/Housing

6-TSSOP,SC-88,SOT-363

SOT-563,SOT-666

FET Type

2 N-channels(two)

Drain source voltage (Vdss)

60V

Current at 25 ° C - continuous drain (Id)

320mA(Ta)

350mA

On resistance (maximum) for different Ids and Vgs

1.6 Ω @ 500mA,10V

Vgs (th) (maximum) for different Ids

2.4V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

0.8nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

50pF @ 10V

FET function

Logic level gate