Total: 44
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Nexperia
Surface mount
Base installation
pallet
CoolMOS™
CoolSiC™+
CoolSiC™
EasyDUAL™
EasyPACK™
EasyPACK™ CoolSiC™
HybridPACK™
On sale
stop production
-40°C ~ 150°C(TJ)
-55°C ~ 150°C(TJ)
-40°C ~ 175°C(TJ)
8-VDFN Exposed Pad
56-VFQFN Exposed Pad
module
SP1
SP6
SP3
F1 module
-
2 N-channels(two)
2 N channels(half-bridge)
2 N Channel(two)Asymmetric type
4 N channels(H )
2 N Channel (two channel step down chopper device)
4 N Channel(half-bridge)
6 N-Channel(3 Phase bridge)
6 N Channel
6 N and 6 P Channel
5 N Channel(Solar inverter device)
1200V(1.2kV)
200V
600V
250V
900V
650V
25A(Tj)
114A(Tc)
75A(Tj)
100A(Tj)
250A(Tc)
375A(Tc)
50A
50A(Tj)
100A
500A(Tc)
150A(Tj)
45A(Tj)
400A
200A(Tj)
200A
400A(Tj)
95A
1.1A
39A
49A
36A
59A
3.5 Ω @ 1A,0V
24 mΩ @ 47.5A,10V
60 mΩ @ 52A,10V
23 mΩ @ 50A,15V
11 mΩ @ 100A,15V
11.3mΩ @ 100A,15V
2.13 mΩ @ 500A,15V
9.8 mΩ @ 150A,15V
45 mΩ @ 25A,15V(standard)
22.5 mΩ @ 50A,15V
45 mΩ @ 25A,15V
15 mΩ @ 75A,15V
2.83 mΩ @ 375A,15V
3.7 mΩ @ 400A,15V
5.81 mΩ @ 250A,15V
5.63 mΩ @ 200A,15V
8 Ω @ 1A,10V
70 mΩ @ 39A,10V
45 mΩ @ 24.5A,10V
14 mΩ @ 100A,20V
90 mΩ @ 27A,10V
2.4V @ 1mA
3.9V @ 3mA
3.9V @ 2.7mA
3.9V @ 5mA
3.5V @ 6mA
3.8V @ 250µA
5.55V @ 20mA
5.55V @ 40mA
5.15V @ 224mA
5.55V @ 90mA
5.55V @ 10mA
5.55V @ 30mA
5.15V @ 168mA
5.55V @ 240mA
5.15V @ 80mA
5.55V @ 80mA
4.3V @ 40mA
125nC @ 15V
250nC @ 15V
248nC @ 15V
1340nC @ 15V
15V
62nC @ 15V
124nC @ 15V
186nC @ 15V
1000nC @ 15V
496nC @ 15V
1320nC @ 15V
300nC @ 10V
7.04nC @ 1.5V
259nC @ 10V
150nC @ 10V
540nC @ 10V
454nC @ 20V
50pF @ 25V
3950pF @ 800V
7950pF @ 800V
7360pF @ 800V
39700pF @ 800V
1840pF @ 800V
3680pF @ 800V
5.52nF @ 800V
7.36nF @ 800V
29800pF @ 25V
1.84nF @ 800V
3.68nF @ 800V
14700pF @ 800V
14.7nF @ 800V
14400pF @ 25V
1000pF @ 25V
7000pF @ 25V
7200pF @ 25V
700pF @ 25V
13600pF @ 100V
4707pF @ 800V
depletion mode
Grade knot
standard
Logic level gate
SiC