Total: 35
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Nexperia
-
Surface mount
CT
HEXFET®
On sale
stop production
150°C(TJ)
8-SOIC(0.154,3.90mm wide)
8-TSSOP(0.173,4.40mm wide)
8-TSSOP,8-MSOP(0.118,3.00mm wide)
6-TSSOP,SC-88,SOT-363
6-VDFN Exposed Pad
8-PowerVDFN
18-PowerVQFN
6-PowerVDFN
N and P Channel
2 P Channel(two)
2 N-channels(two)
30V
20V
60V
40V
50V
100V
25V
55V
80V
3.9A
6.5A
2A
5.1A
11A
4.9A
200mA
3.5A
3.8A
2.3A
5.2A
1.7A
2.4A,1.7A
4.3A
3A
4A,3A
3.5A,2.3A
3.6A
4.5A
2.4A
5.2A,4.3A
4.7A,3.4A
3.4A
5.8A,4.3A
13A,28A
300 mΩ @ 1.5A,10V
105 mΩ @ 3.4A,10V
100 mΩ @ 3.5A,10V
130 mΩ @ 3A,10V
100 mΩ @ 1.8A,10V
90 mΩ @ 2.2A,4.5V
50 mΩ @ 5.1A,10V
2.1 Ω @ 500mA,10V
100 mΩ @ 2.2A,10V
195 mΩ @ 2.9A,10V
63 mΩ @ 3.4A,4.5V
135 mΩ @ 1.7A,4.5V
55 mΩ @ 4.3A,4.5V
29 mΩ @ 5.8A,10V
50 mΩ @ 4.7A,10V
100 mΩ @ 1A,10V
135 mΩ @ 1.7A,10V
55 mΩ @ 4.9A,10V
130 mΩ @ 1.7A,4.5V
140 mΩ @ 1.7A,4.5V
50 mΩ @ 2.4A,10V
50 mΩ @ 2.6A,4.5V
58 mΩ @ 4.9A,10V
45 mΩ @ 3.4A,4.5V
73 mΩ @ 2.2A,10V
170 mΩ @ 3.1A,10V
14.9 mΩ @ 10A,10V
45 mΩ @ 5.8A,10V
8.6 mΩ @ 12A,10V
270 mΩ @ 1.2A,10V
51 mΩ @ 3.7A,4.5V
58 mΩ @ 5.2A,4.5V
80 mΩ @ 3.4A,10V
1.2V @ 250µA
4V @ 250µA
1V @ 250µA
700mV @ 250µA
3V @ 250µA
1V @ 250µA(min)
1.1V @ 10µA
3.1V @ 250µA
2.35V @ 25µA
2.4V @ 10µA
4V @ 10µA
11nC @ 10V
12nC @ 10V
3.1nC @ 4.5V
12.5nC @ 10V
44nC @ 10V
6nC @ 4.5V
14nC @ 10V
33nC @ 10V
25.7nC @ 10V
30nC @ 10V
20nC @ 4.5V
36nC @ 10V
8nC @ 4.5V
25nC @ 4.5V
29nC @ 4.5V
22nC @ 4.5V
34nC @ 10V
25nC @ 10V
23nC @ 10V
2.8nC @ 4.5V
38nC @ 10V
27nC @ 10V
12nC @ 4.5V
3.7nC @ 10V
15nC @ 10V
6.3nC @ 10V
28nC @ 10V
15nC @ 5V
17nC @ 4.5V
930pF @ 25V
435pF @ 25V
350pF @ 15V
270pF @ 25V
310pF @ 10V
260pF @ 15V
210pF @ 25V
520pF @ 15V
660pF @ 15V
610pF @ 15V
710pF @ 25V
190pF @ 15V
440pF @ 25V
520pF @ 25V
660pF @ 25V
650pF @ 25V
740pF @ 25V
690pF @ 25V
330pF @ 15V
160pF @ 25V
255pF @ 25V
780pF @ 25V
251pF @ 25V
1165pF @ 10V
1060pF @ 15V
180pF @ 25V
1066pF @ 10V
1090pF @ 15V
913pF @ 15V
330pF @ 25V
900pF @ 32V
17pF @ 25V
standard
Logic level gate