stop productionTR-55°C ~ 175°C(TJ)3V @ 250µALogic level gate-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR

series

Automotive, AEC-Q101

PowerTrench®

Part status

stop production

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

8-PowerTDFN

FET Type

2 P Channel(two)

2 N-channels(two)

Drain source voltage (Vdss)

30V

60V

Current at 25 ° C - continuous drain (Id)

7A

On resistance (maximum) for different Ids and Vgs

23 mΩ @ 7A,10V

33 mΩ @ 7.5A,10V

Vgs (th) (maximum) for different Ids

3V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

20nC @ 10V

21nC @ 5V

Input capacitance at different Vds (Ciss) (maximum)

540pF @ 25V

1233pF @ 15V

FET function

Logic level gate