On saleTRSOT-23-6 ,TSOT-23-6standard1.2V @ 250µA,1V @ 250µA-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR

series

Part status

On sale

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

SOT-23-6 ,TSOT-23-6

FET Type

N and P Channel Complementary type

Drain source voltage (Vdss)

20V

Current at 25 ° C - continuous drain (Id)

4A(Ta),3.3A(Ta)

On resistance (maximum) for different Ids and Vgs

42 mΩ @ 5A,4.5V,70 mΩ @ 3.5A,4.5V

Vgs (th) (maximum) for different Ids

1.2V @ 250µA,1V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

10.5nC @ 10V,6.5nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

416pF @ 10V,536pF @ 10V

FET function

standard