TRSurface mount-55°C ~ 150°C(TJ)PowerTrench®30V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR

series

PowerTrench®

Part status

On sale

stop production

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

8-TSSOP(0.173,4.40mm wide)

14-SOIC(0.154,3.90mm wide)

SOT-23-6 ,TSOT-23-6

8-PowerWDFN

8-PowerTDFN

12-PowerWQFN

8-LSOP(0.130,3.30mm wide)

14-SOIC(0.154,3.90mm wide)11 feedthrough,feedthrough

FET Type

2 N Channel(two)Cosource

N and P Channel

2 P Channel(two)

2 N-channels(two)

2 N Channel(two)Co leakage

2 N Channel(two)Asymmetric type

Drain source voltage (Vdss)

30V

Current at 25 ° C - continuous drain (Id)

3.5A

4.1A,3.4A

3A

8.2A

12A,15A

6.4A,4.5A

7A,5A

16.1A(Ta),80A(Tc)

38A(Ta),167A(Tc)

14A,11A

28A(Ta),95A(Tc)

13A(Ta),24A(Tc),18A(Ta),60A(Tc)

2.5A (Ta), 2A (Ta)

On resistance (maximum) for different Ids and Vgs

8.7 mΩ @ 14A,10V

7.5 mΩ @ 15A,10V

1 mΩ @ 38A,10V

28 mΩ @ 7A,10V

90 mΩ @ 3.5A,10V

2.5 mΩ @ 18A,10V

52 mΩ @ 3A,10V

80 mΩ @ 4.1A,10V

15 mΩ @ 8.2A,4.5V

26 mΩ @ 6.4A,10V,51 mΩ @ 4.5A,10V

2.12 mΩ @ 28A,10V

10mΩ @ 13A,10V,5mΩ @ 18A,10V

95mOhm @ 2.5A, 10V, 130mOhm @ 2A, 10V

Vgs (th) (maximum) for different Ids

3V @ 250µA

1.5V @ 250µA

3V @ 400µA

2.7V @ 250µA,2.5V @ 1mA

Gate charge (Qg) at different Vgs (maximum)

26nC @ 10V

6.6nC @ 4.5V

17nC @ 5V

90nC @ 10V

20.8nC @ 10V,20.5nC @ 10V

142nC @ 10V

30nC @ 4.5V

12nC @ 5V

4nC @ 5V

24nC @ 15V

5.8nC @ 4.5V,9.6nC @ 4.5V

24nC @ 10V,34nC @ 10V

6.6nC @ 10V, 5.7nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

920pF @ 15V

220pF @ 15V

1500pF @ 15V,1521pF @ 15V

9930pF @ 15V

750pF @ 15V

789pF @ 10V

282pF @ 10V

1324pF @ 15V

1840pF @ 15V

540pF @ 15V,760pF @ 15V

5035pF @ 15V

1605pF @ 15V,2060pF @ 15V

282pF @ 15V, 185pF @ 15V

FET function

standard

Logic level gate