stop production-55°C ~ 175°C(TJ)3V @ 250µAHEXFET®Logic level gate-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

pipe

series

HEXFET®

Part status

stop production

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

FET Type

2 N-channels(two)

Drain source voltage (Vdss)

30V

55V

Current at 25 ° C - continuous drain (Id)

6.9A

5.1A

On resistance (maximum) for different Ids and Vgs

50 mΩ @ 5.1A,10V

29 mΩ @ 6.9A,10V

Vgs (th) (maximum) for different Ids

3V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

44nC @ 10V

33nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

755pF @ 25V

780pF @ 25V

FET function

Logic level gate