On sale4.5V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR,CT

series

Automotive, AEC-Q101

Part status

On sale

working temperature

-55°C ~ 150°C(TJ)

150°C

Encapsulation/Housing

6-TSSOP,SC-88,SOT-363

6-SMD,feedthrough

FET Type

N and P Channel

2 N-channels(two)

Drain source voltage (Vdss)

60V

30V,20V

Current at 25 ° C - continuous drain (Id)

4A(Ta)

220mA(Ta)

On resistance (maximum) for different Ids and Vgs

2.7 Ω @ 300mA,4.5V

39.1 mΩ @ 2A,4.5V,45 mΩ @ 3.5A,10V

Vgs (th) (maximum) for different Ids

900mV @ 250µA

1V @ 1mA,1.2V @ 1mA

Gate charge (Qg) at different Vgs (maximum)

4.5V

Input capacitance at different Vds (Ciss) (maximum)

27pF @ 30V

310pF @ 15V,480pF @ 10V

FET function

standard