On sale29 mΩ @ 6A,4.5V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR,CT

series

HEXFET®

Part status

On sale

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

FET Type

N and P Channel

2 N-channels(two)

Drain source voltage (Vdss)

20V

Current at 25 ° C - continuous drain (Id)

6.6A

6.6A,5.3A

On resistance (maximum) for different Ids and Vgs

29 mΩ @ 6A,4.5V

Vgs (th) (maximum) for different Ids

700mV @ 250µA

Gate charge (Qg) at different Vgs (maximum)

27nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

900pF @ 15V

FET function

Logic level gate