stop productionTRSurface mount-8A-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR

series

Part status

stop production

working temperature

150°C(TJ)

Encapsulation/Housing

8-SOIC(0.173,4.40mm wide)

8-SMD,feedthrough

FET Type

2 P Channel(two)

2 N Channel(two)Co leakage

Drain source voltage (Vdss)

30V

24V

Current at 25 ° C - continuous drain (Id)

8A

On resistance (maximum) for different Ids and Vgs

26 mΩ @ 8A,10V

23 mΩ @ 4A,4.5V

Vgs (th) (maximum) for different Ids

-

Gate charge (Qg) at different Vgs (maximum)

18nC @ 10V

7.5nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

-

900pF @ 10V

FET function

Logic level gate

Logic level gate,2.5V drive