Not applicable to new designSurface mount8-PowerVDFN1314pF @ 13V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR,CT

TR,CT,bulk

series

HEXFET®

FASTIRFET™

Part status

Not applicable to new design

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-PowerVDFN

FET Type

2 N-channels(two)

2 N channels(two),Schottky barrier

Drain source voltage (Vdss)

25V

Current at 25 ° C - continuous drain (Id)

64A,145A

64A,188A

On resistance (maximum) for different Ids and Vgs

3.2 mΩ @ 30A,10V

Vgs (th) (maximum) for different Ids

2.1V @ 35µA

Gate charge (Qg) at different Vgs (maximum)

15nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

1314pF @ 13V

FET function

Logic level gate