6-UFBGA,DSBGA-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR,CT

TR,CT,bulk

series

NexFET™

Part status

On sale

stop production

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

6-UFBGA,DSBGA

FET Type

2 P Channel(two)

2 P Channel(two)Cosource

Drain source voltage (Vdss)

20V

Current at 25 ° C - continuous drain (Id)

1.6A

1.2A

On resistance (maximum) for different Ids and Vgs

100 mΩ @ 1A,4.5V

120 mΩ @ 1A,4.5V

68 mΩ @ 1A,4.5V

Vgs (th) (maximum) for different Ids

1V @ 250µA

1.1V @ 250µA

850mV @ 250µA

Gate charge (Qg) at different Vgs (maximum)

2.1nC @ 4.5V

2.2nC @ 4.5V

2.5nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

265pF @ 10V

410pF @ 10V

195pF @ 10V

FET function

Logic level gate