Total: 20
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Nexperia
Base installation
bulk
pallet
CoolMOS™
On sale
stop production
-40°C ~ 150°C(TJ)
SP1
2 N-channels(two)
2 N channels(half-bridge)
4 N channels(H )
2 N Channel (two channel step down chopper device)
2 N Channel(phase angle)
3 N Channel(phase angle + Boost chopper circuit)
1200V(1.2kV)
500V
600V
1700V(1.7kV)
800V
900V
100A(Tc)
55A(Tc)
50A(Tc)
143A(Tc)
25A
20A
8A
40A
95A
39A
49A
28A
72A
59A
24 mΩ @ 47.5A,10V
60 mΩ @ 52A,10V
17 mΩ @ 100A,20V
150 mΩ @ 14A,10V
70 mΩ @ 39A,10V
180 mΩ @ 21A,10V
132 mΩ @ 33A,10V
45 mΩ @ 24.5A,10V
276 mΩ @ 17A,10V
1.68 Ω @ 7A,10V
35 mΩ @ 72A,10V
49 mΩ @ 40A,20V
60 mΩ @ 50A,20V
30 mΩ @ 100A,20V
5V @ 1mA
3.9V @ 3mA
5V @ 2.5mA
3.9V @ 2.7mA
3.9V @ 2mA
3.9V @ 5.4mA
3.9V @ 5mA
3.5V @ 6mA
2.2V @ 2mA(standard)
2.3V @ 2mA(standard)
2.3V @ 2.5mA(standard)
2.3V @ 5mA(standard)
300nC @ 10V
259nC @ 10V
170nC @ 10V
330nC @ 10V
150nC @ 10V
165nC @ 10V
180nC @ 10V
145nC @ 10V
518nC @ 10V
98nC @ 20V
360nC @ 20V
540nC @ 10V
190nC @ 20V
380nC @ 20V
14400pF @ 25V
7000pF @ 25V
5448pF @ 25V
10552pF @ 25V
7200pF @ 25V
5316pF @ 25V
4507pF @ 25V
3812pF @ 25V
14000pF @ 25V
1900pF @ 1000V
5960pF @ 1000V
13600pF @ 100V
3080pF @ 1000V
6160pF @ 1000V
Grade knot
standard
Logic level gate
SiC