Total: 34
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Nexperia
-
Base installation
bulk
pallet
CoolMOS™
POWER MOS 8™
On sale
-40°C ~ 150°C(TJ)
SP3
2 N-channels(two)
2 N channels(half-bridge)
2 N Channel(two)Asymmetric type
4 N channels(H )
2 N Channel (two channel step down chopper device)
2 N Channel(phase angle)
4 N channels(Three stage inverter)
4 N channels(H )+ Bridge rectifier device
100V
1200V(1.2kV)
500V
600V
1000V(1kV)
800V
48A(Tc)
28A(Tc)
15A
220A(Tc)
70A
95A
46A
18A
113A(Tc)
51A
26A
39A
28A
72A
37A
22A
139A
19A
295A(Tc)
45A
24 mΩ @ 47.5A,10V
150 mΩ @ 14A,10V
290 mΩ @ 7.5A,10V
90 mΩ @ 23A,10V
540 mΩ @ 9A,10V
25 mΩ @ 80A,20V
78 mΩ @ 25.5A,10V
168 mΩ @ 13A,10V
70 mΩ @ 39A,10V
21 mΩ @ 35A,10V
35 mΩ @ 72A,10V
120 mΩ @ 18.5A,10V
420 mΩ @ 11A,10V
10 mΩ @ 69.5A,10V
552 mΩ @ 16A,10V
98 mΩ @ 20A,20V
49 mΩ @ 40A,20V
12 mΩ @ 150A,20V
9 mΩ @ 200A,20V
150 mΩ @ 22.5A,10V
4V @ 2.5mA
5V @ 1mA
5V @ 2.5mA
4V @ 1mA
3.9V @ 2.7mA
3.9V @ 2mA
3.9V @ 5.4mA
3.9V @ 1mA
3.9V @ 5mA
2.2V @ 1mA
2.2V @ 4mA(standard)
2.2V @ 2mA(standard)
2.4V @ 30mA(standard)
2.4V @ 40mA(standard)
123nC @ 10V
300nC @ 10V
154nC @ 10V
197nC @ 20V
140nC @ 10V
72nC @ 10V
259nC @ 10V
90nC @ 10V
200nC @ 10V
180nC @ 10V
518nC @ 10V
96nC @ 10V
186nC @ 10V
350nC @ 10V
260nC @ 10V
98nC @ 20V
49nC @ 20V
483nC @ 20V
644nC @ 20V
14400pF @ 25V
5600pF @ 25V
4350pF @ 25V
3800pF @ 1000V
7000pF @ 25V
3259pF @ 25V
2254pF @ 25V
5100pF @ 25V
4507pF @ 25V
14000pF @ 25V
4367pF @ 25V
5200pF @ 25V
9875pF @ 25V
6800pF @ 25V
700pF @ 25V
950pF @ 1000V
1900pF @ 1000V
8400pF @ 1000V
11000pF @ 1000V
7600pF @ 25V
Grade knot
standard
Logic level gate
SiC