TR-2 P Channel(two)8-SMD,feedthrough-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR

series

Part status

stop production

working temperature

150°C(TJ)

Encapsulation/Housing

8-SMD,feedthrough

FET Type

2 P Channel(two)

Drain source voltage (Vdss)

20V

60V

Current at 25 ° C - continuous drain (Id)

2.5A

3A

On resistance (maximum) for different Ids and Vgs

85 mΩ @ 3A,4.5V

137 mΩ @ 1.5A,10V

Vgs (th) (maximum) for different Ids

-

Gate charge (Qg) at different Vgs (maximum)

11nC @ 10V

4nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

320pF @ 10V

420pF @ 20V

FET function

Logic level gate

Logic level gate,1.8V drive