3 N Channeland 3 P Channel(3 Phase bridge type)-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Select FET, MOSFET

Home

Category

FET, MOSFET

Total: 1

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR,CT

series

Part status

stop production

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

16-SOIC(0.154,3.90mm wide)

FET Type

3 N Channeland 3 P Channel(3 Phase bridge type)

Drain source voltage (Vdss)

30V

Current at 25 ° C - continuous drain (Id)

On resistance (maximum) for different Ids and Vgs

90 mΩ @ 3A,10V

Vgs (th) (maximum) for different Ids

3V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

25nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

360pF @ 10V

FET function

Logic level gate

Reset