5V @ 250µA100V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Through-Hole

packing

pipe

bulk,pipe

series

Part status

On sale

stop production

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

TO-220-5 Full package,feedthrough

TO-220-5 Whole package

FET Type

2 N-channels(two)

Drain source voltage (Vdss)

100V

Current at 25 ° C - continuous drain (Id)

11A(Tc)

11A

On resistance (maximum) for different Ids and Vgs

72.5 mΩ @ 6.6A,10V

Vgs (th) (maximum) for different Ids

5V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

18nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

490pF @ 50V

FET function

standard