3.8A(Tc)-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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FET, MOSFET

Total: 1

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

series

TrenchPLUS

Part status

stop production

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

20-SOIC(0.295,7.50mm wide)

FET Type

2 N-channels(two)

Drain source voltage (Vdss)

65V

Current at 25 ° C - continuous drain (Id)

3.8A(Tc)

On resistance (maximum) for different Ids and Vgs

90.4 mΩ @ 3A,10V

Vgs (th) (maximum) for different Ids

2V @ 1mA

Gate charge (Qg) at different Vgs (maximum)

6.3nC @ 5V

Input capacitance at different Vds (Ciss) (maximum)

535pF @ 25V

FET function

Logic level gate

Reset