21A(Ta)-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR,CT

series

Automotive, AEC-Q101

Part status

On sale

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

SOT-1205,8-LFPAK56

FET Type

2 N-channels(two)

Drain source voltage (Vdss)

80V

Current at 25 ° C - continuous drain (Id)

21A(Ta)

On resistance (maximum) for different Ids and Vgs

-

19 mΩ @ 10A,10V

Vgs (th) (maximum) for different Ids

4V @ 1mA

2.1V @ 1mA

Gate charge (Qg) at different Vgs (maximum)

-

23.1nC @ 5V

Input capacitance at different Vds (Ciss) (maximum)

-

3115pF @ 25V

FET function

standard

Logic level gate