Total: 8
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Nexperia
Surface mount
Base installation
bulk
TR,CT
bulk,pallet
HEXFET®
NexFET™
On sale
stop production
-40°C ~ 150°C(TJ)
-55°C ~ 150°C(TJ)
module
5-XFLGA
8-PowerVDFN
SP1
8-PowerLDFN
10-SMD,no feedthrough
5-LGA
2 N-channels(two)
2 N Channel(two)Co leakage
2 N channels(half-bridge)
4 N channels(H )
30V
24V
25V
1200V(1.2kV)
500V
25A
-
3.4 mΩ @ 25A,10V
45 mΩ @ 25A,15V
180 mΩ @ 21A,10V
9.6 mΩ @ 15A,10V
5V @ 1mA
1.15V @ 250µA
1.9V @ 250µA
2.1V @ 35µA
5.5V @ 10mA
4.1nC @ 4.5V
15nC @ 4.5V
7.4nC @ 4.5V
620nC @ 15V
170nC @ 10V
49nC @ 4.5V
12.5nC @ 4.5V
1321pF @ 13V
2000pF @ 800V
5448pF @ 25V
736pF @ 15V
1800pF @ 15V
1050pF @ 15V
standard
Logic level gate
SiC