17A(Ta)-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR

TR,CT

series

Automotive, AEC-Q101

OptiMOS™

Part status

On sale

working temperature

-55°C ~ 150°C(TJ)

-55°C ~ 175°C(TJ)

Encapsulation/Housing

6-SMD,no feedthrough

8-PowerTDFN

SOT-1205,8-LFPAK56

FET Type

2 N-channels(two)

2 N Channel(two)Co leakage

2 N Channel

Drain source voltage (Vdss)

-

12V

80V

Current at 25 ° C - continuous drain (Id)

17A(Ta)

On resistance (maximum) for different Ids and Vgs

23 mΩ @ 10A,10V

5.9mOhm @ 5A,4.5V

5 mΩ @ 7A,10V

26 mΩ @ 5A,10V

Vgs (th) (maximum) for different Ids

4V @ 1mA

2V @ 250µA

1.3V @ 1mA

2.1V @ 1mA

Gate charge (Qg) at different Vgs (maximum)

-

24nC @ 4.5V

17.5nC @ 5V

22.8nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

-

2297pF @ 25V

1542pF @ 25V

FET function

standard

Logic level gate