70A-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Base installation

packing

bulk

series

Part status

On sale

working temperature

-40°C ~ 150°C(TJ)

Encapsulation/Housing

SP6

SP3

FET Type

2 N-channels(two)

4 N channels(H )

6 N-Channel(3 Phase bridge)

Drain source voltage (Vdss)

100V

Current at 25 ° C - continuous drain (Id)

70A

On resistance (maximum) for different Ids and Vgs

21 mΩ @ 35A,10V

Vgs (th) (maximum) for different Ids

4V @ 1mA

Gate charge (Qg) at different Vgs (maximum)

200nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

5100pF @ 25V

FET function

standard