Total: 24
TI
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Nexperia
Surface mount
Base installation
bulk
TR
TR,CT
pipe
TR,CT,bulk
OptiMOS™
STripFET™ II
STripFET™ III
PowerTrench®
HEXFET®
GreenBridge™ PowerTrench®
On sale
stop production
Not applicable to new design
-40°C ~ 150°C(TJ)
150°C(TJ)
-55°C ~ 150°C(TJ)
8-SOIC(0.154,3.90mm wide)
8-SOIC(0.173,4.40mm wide)
6-SMD,no feedthrough
8-PowerVDFN
SP1
8-SMD,feedthrough
12-WDFN Exposed Pad
2 P Channel(two)
2 N-channels(two)
2 N Channel(two)Co leakage
4 N channels(H )
30V
20V
12V
60V
24V
35V
1200V(1.2kV)
8A
20 mΩ @ 4A,10V
15 mΩ @ 20A,10V
24 mΩ @ 8A,10V
20 mΩ @ 8A,10V
17 mΩ @ 8A,4.5V
21 mΩ @ 8A,10V
22 mΩ @ 4A,10V
24 mΩ @ 8.2A,4.5V
15 mΩ @ 9.3A,10V
17.8 mΩ @ 8A,10V
1.68 Ω @ 7A,10V
20.5 mΩ @ 4A,4.5V
17.5 mΩ @ 8A,10V
26 mΩ @ 8A,4.5V
26 mΩ @ 8A,10V
23 mΩ @ 4A,4.5V
5.1 mΩ @ 8A,4.5V
-
2.5V @ 250µA
5V @ 1mA
1V @ 250µA
2.2V @ 250µA
3V @ 250µA
2V @ 250µA
1.5V @ 250µA
2.6V @ 1mA
2V @ 30µA
900mV @ 250µA
2.4V @ 25µA
4V @ 50µA
8.8nC @ 4.5V
18nC @ 10V
13nC @ 10V
17nC @ 10V
13.2nC @ 10V
24nC @ 4.5V
33nC @ 10V
20nC @ 4.5V
36nC @ 10V
39nC @ 10V
78nC @ 10V
12nC @ 4.5V
10nC @ 4.5V
17nC @ 5V
145nC @ 10V
7.5nC @ 4.5V
12.3nC @ 4.5V
867pF @ 15V
1300pF @ 25V
1100pF @ 15V
1300pF @ 15V
2675pF @ 25V
1330pF @ 30V
900pF @ 10V
870pF @ 25V
3812pF @ 25V
2295pF @ 30V
1676pF @ 10V
1455pF @ 10V
815pF @ 10V
660pF @ 20V
800pF @ 25V
857pF @ 25V
standard
Logic level gate
Logic level gate,2.5V drive