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FET, MOSFET

Total: 13

ECH8662-TL-H
Brand：ON
Stock：12594
Store: ShenZhen/Hongkong
Description：MOSFET 2N-CH 40V 6.5A ECH8
Offer
FDZ2554P
Brand：ON
Stock：3302
Store: ShenZhen/Hongkong
Description：MOSFET 2P-CH 20V 6.5A BGA
Offer
FDZ2554PZ
Brand：ON
Stock：21413
Store: ShenZhen/Hongkong
Description：MOSFET 2P-CH 20V 6.5A BGA
Offer
FDS9926A
Brand：ON
Stock：16172
Store: ShenZhen/Hongkong
Description：MOSFET 2N-CH 20V 6.5A 8SOIC
Offer
Price：1+
￥0.87
IRF7313QTRPBF
Brand：Infineon
Stock：28909
Store: ShenZhen/Hongkong
Description：MOSFET 2N-CH 30V 6.5A 8-SOIC
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IRF7313PBF
Brand：Infineon
Stock：10735
Store: ShenZhen/Hongkong
Description：MOSFET 2N-CH 30V 6.5A 8-SOIC
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IRF6156
Brand：Infineon
Stock：10412
Store: ShenZhen/Hongkong
Description：MOSFET 2N-CH 20V 6.5A FLIP-FET
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IRF7313TRPBF
Brand：Infineon
Stock：4419
Store: ShenZhen/Hongkong
Description：MOSFET 2N-CH 30V 6.5A 8-SOIC
Offer
Price：1+
￥1.22
ZXMN3A04DN8TC
Brand：Diodes
Stock：29541
Store: ShenZhen/Hongkong
Description：MOSFET 2N-CH 30V 6.5A 8SOIC
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ZXMD65N03N8TA
Brand：Diodes
Stock：31413
Store: ShenZhen/Hongkong
Description：MOSFET 2N-CH 30V 6.5A 8-SOIC
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DMG5802LFX-7
Brand：Diodes
Stock：25779
Store: ShenZhen/Hongkong
Description：MOSFET 2N-CH 24V 6.5A 6DFN
Offer
Price：1+
￥0.34
ZXMN3A04DN8TA
Brand：Diodes
Stock：24103
Store: ShenZhen/Hongkong
Description：MOSFET 2N-CH 30V 6.5A 8-SOIC
Offer
Price：1+
￥2.44
DMG6968UDM-7
Brand：Diodes
Stock：6639
Store: ShenZhen/Hongkong
Description：MOSFET 2N-CH 20V 6.5A SOT-26
Offer
Price：1+
￥0.66
Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

bulk

TR

TR,CT

CT

pipe

series

PowerTrench®

HEXFET®

Part status

On sale

stop production

working temperature

150°C(TJ)

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

SOT-23-6

18-WFBGA

6-VFDFN Exposed Pad

6-FlipFet™

8-SMD,feedthrough

FET Type

2 P Channel(two)

2 N-channels(two)

2 N Channel(two)Co leakage

Drain source voltage (Vdss)

30V

20V

40V

24V

Current at 25 ° C - continuous drain (Id)

6.5A

On resistance (maximum) for different Ids and Vgs

-

30 mΩ @ 6.5A,4.5V

29 mΩ @ 5.8A,10V

24 mΩ @ 6.5A,4.5V

20 mΩ @ 12.6A,10V

15 mΩ @ 6.5A,4.5V

40 mΩ @ 6.5A,4.5V

30 mΩ @ 3.5A,4.5V

28 mΩ @ 6.5A,4.5V

Vgs (th) (maximum) for different Ids

1.2V @ 250µA

-

1V @ 250µA

1V @ 250µA(min)

1.5V @ 250µA

900mV @ 250µA

Gate charge (Qg) at different Vgs (maximum)

-

8.8nC @ 4.5V

36.8nC @ 10V

31.3nC @ 10V

33nC @ 10V

20nC @ 4.5V

9nC @ 4.5V

12nC @ 4.5V

18nC @ 5V

21nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

-

143pF @ 10V

1890pF @ 15V

1066.4pF @ 15V

650pF @ 25V

950pF @ 15V

650pF @ 10V

1430pF @ 10V

1900pF @ 10V

1130pF @ 20V

FET function

standard

Logic level gate

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