3.6A(Ta),2.8A(Ta)-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR

series

Part status

On sale

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

SOT-23-6 ,TSOT-23-6

FET Type

N and P Channel Complementary type

Drain source voltage (Vdss)

30V

Current at 25 ° C - continuous drain (Id)

3.6A(Ta),2.8A(Ta)

On resistance (maximum) for different Ids and Vgs

60 mΩ @ 3.1A,10V,95 mΩ @ 2.7A,10V

Vgs (th) (maximum) for different Ids

1.8V @ 250µA,2.1V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

11.3nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

395pF @ 15V,324pF @ 15V

FET function

standard