2V @ 250µA30 mΩ @ 5.8A,10V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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FET, MOSFET

Total: 4

DMN3032LFDBQ-13

Brand：Diodes

Stock：29823

Store: ShenZhen/Hongkong

Description：MOSFET 2NCH 30V 6.2A UDFN2020

Price：1+

￥0.22

DMN3032LFDB-13

Brand：Diodes

Stock：30230

Store: ShenZhen/Hongkong

Description：MOSFET 2N-CH 30V 6.2A UDFN2020-6

Price：1+

￥0.17

DMN3032LFDB-7

Brand：Diodes

Stock：28999

Store: ShenZhen/Hongkong

Description：MOSFET 2N-CH 30V 6.2A UDFN2020-6

Price：1+

￥0.56

DMN3032LFDBQ-7

Brand：Diodes

Stock：2644

Store: ShenZhen/Hongkong

Description：MOSFET 2N-CH 30V 6.2A U-DFN2020

Price：1+

￥0.77

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR,CT

series

Automotive, AEC-Q101

Part status

On sale

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

6-UDFN Exposed Pad

FET Type

2 N-channels(two)

Drain source voltage (Vdss)

30V

Current at 25 ° C - continuous drain (Id)

6.2A(Ta)

6.2A

On resistance (maximum) for different Ids and Vgs

30 mΩ @ 5.8A,10V

Vgs (th) (maximum) for different Ids

2V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

10.6nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

500pF @ 15V

FET function

standard

Reset