17 mΩ @ 8A,4.5V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR

series

PowerTrench®

Part status

stop production

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

FET Type

2 N-channels(two)

Drain source voltage (Vdss)

20V

Current at 25 ° C - continuous drain (Id)

8A

On resistance (maximum) for different Ids and Vgs

17 mΩ @ 8A,4.5V

Vgs (th) (maximum) for different Ids

1.5V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

24nC @ 4.5V

20nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

1676pF @ 10V

1455pF @ 10V

FET function

Logic level gate