6.9 mΩ @ 20A,10V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR

TR,CT

series

Automotive, AEC-Q101

Part status

On sale

stop production

Not applicable to new design

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-PowerTDFN

FET Type

2 N-channels(two)

Drain source voltage (Vdss)

40V

80V

Current at 25 ° C - continuous drain (Id)

15A

14A(Ta),74A(Tc)

On resistance (maximum) for different Ids and Vgs

6.9 mΩ @ 20A,10V

Vgs (th) (maximum) for different Ids

2.4V @ 250µA

2V @ 96µA

Gate charge (Qg) at different Vgs (maximum)

32nC @ 10V

36nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

1800pF @ 25V

2002pF @ 40V

FET function

standard

Logic level gate