TRSurface mount-55°C ~ 150°C(TJ)30V35 mΩ @ 9A,10V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Select FET, MOSFET

Home

Category

FET, MOSFET

Total: 1

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

series

Part status

stop production

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

FET Type

2 N-channels(two)

Drain source voltage (Vdss)

30V

Current at 25 ° C - continuous drain (Id)

4.9A

On resistance (maximum) for different Ids and Vgs

35 mΩ @ 9A,10V

Vgs (th) (maximum) for different Ids

1V @ 250µA(min)

Gate charge (Qg) at different Vgs (maximum)

17.5nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

796pF @ 25V

FET function

Logic level gate

Reset