50 mΩ @ 2.4A,10V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

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FET, MOSFET

Total: 8

Brand：Infineon

Store: ShenZhen/Hongkong

Description：MOSFET N/P-CH 30V 4A/3A 8SOIC

Brand：Infineon

Store: ShenZhen/Hongkong

Description：MOSFET N/P-CH 30V 4A/3A 8SOIC

Brand：Infineon

Store: ShenZhen/Hongkong

Description：MOSFET 2N-CH 30V 4.9A 8-SOIC

Brand：Infineon

Store: ShenZhen/Hongkong

Description：MOSFET N/P-CH 30V 4A/3A 8SOIC

Price：1+

￥0.20

Brand：Infineon

Store: ShenZhen/Hongkong

Description：MOSFET 2N-CH 30V 4.9A 8-SOIC

Brand：Infineon

Store: ShenZhen/Hongkong

Description：MOSFET N/P-CH 30V 4A/3A 8SO

Price：1+

￥2.58

Brand：Infineon

Store: ShenZhen/Hongkong

Description：MOSFET 2N-CH 30V 4.9A 8-SOIC

Price：1+

￥1.34

Brand：Infineon

Store: ShenZhen/Hongkong

Description：MOSFET N/P-CH 30V 4A/3A 8SOIC

Price：1+

￥1.32

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

packing

TR,CT

CT

pipe

TR,CT,bulk

pipe

series

HEXFET®

Part status

On sale

stop production

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

FET Type

N and P Channel

2 N-channels(two)

Drain source voltage (Vdss)

30V

Current at 25 ° C - continuous drain (Id)

4.9A

4A,3A

On resistance (maximum) for different Ids and Vgs

50 mΩ @ 2.4A,10V

Vgs (th) (maximum) for different Ids

1V @ 250µA

3V @ 250µA

Gate charge (Qg) at different Vgs (maximum)

25nC @ 4.5V

25nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

520pF @ 15V

520pF @ 25V

FET function

standard

Logic level gate

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