7.6 mΩ @ 17A,10V-FET, MOSFET[Parameters, quotations, pictures, datasheet]-ICQQG

Brand

TI

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Nexperia

Installation type

Surface mount

Surface mount,Wettable wings

packing

TR,CT

TR,CT,bulk

series

OptiMOS™

Automotive, AEC-Q101, OptiMOS™

OptiMOS™-T2

Part status

On sale

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-PowerVDFN

FET Type

2 N-channels(two)

Drain source voltage (Vdss)

40V

Current at 25 ° C - continuous drain (Id)

20A(Tc)

20A

On resistance (maximum) for different Ids and Vgs

7.6 mΩ @ 17A,10V

Vgs (th) (maximum) for different Ids

4V @ 30µA

Gate charge (Qg) at different Vgs (maximum)

36nC @ 10V

38nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

2940pF @ 25V

2950pF @ 20V

FET function

standard