Select
FET, MOSFET
Total: 2
packing
working temperature
Encapsulation/Housing
FET Type
Drain source voltage (Vdss)
Current at 25 ° C - continuous drain (Id)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
FET function
